Multi-Target-Module (MTM)

Multi-Target-Module with 10 DC/RF Cathodes
Multiple film stack deposition, without the need to break ultra-high vacuum, is one of the key advantages of the MTM process module. Additional features such as wafer heating for hot substrate deposition (option) or a collinear Aligning Magnetic Field (AMF) are available. The AMF can be activated to align the magnetic easy axis during deposition of ferromagnetic films.

The Linear Dynamic Deposition (LDD) technology enables the capability to deposit wedge films with a different film thickness across the wafer and to deposit alloy films with adjustable concentration gradients across one wafer. Both features allow a very cost effective development of film stacks and accelerate the devices development.

The LDD technology is the key to delivering world class material uniformity across large wafers and exceptional precise control of ultrathin layer thickness down to 1 % of a nanometer.

Details:

  • DC/RF magnetron
  • All sputter deposition modes selectable
    by recipe for all 10 cathodes
  • LDD technology
  • RF bias option
  • Ultra-high vacuum technology, base
    pressure < 5*10-9 Torr
  • Wafer heating and cooling (options)

Four-Target-Module (FTM)

Four-Target-Module with 4 DC/RF Cathodes
The Four-Target-Module (FTM) incorporates Linear Dynamic Deposition (LDD) technology in combination with up to four sputter targets in one vacuum chamber.

The FTM incorporates the same functionalities like the Multi-Target-Module (MTM) such as the substrate heating, the Aligning Magnetic Field (AMF) and the capability to deposit wedge films with a different film thickness across the wafer and to deposit alloy films with adjustable concentration gradients across one wafer. The only difference of the FTM is the number of targets. It is particularly designed for deposition of periodic multi-layers with high wafer throughput.

Details:

  • DC/RF magnetron
  • All sputter deposition modes selectable
    by recipe for all 4 cathodes
  • LDD technology
  • RF bias option
  • Ultra-high vacuum technology, base
    pressure < 5*10-9 Torr
  • Wafer heating and cooling

Pre-Clean-Module (PCM)

Cleaning of Wafer prior to Deposition
The Pre-Clean-Module (PCM) is used to clean the wafer prior to deposition. This is a standard technique employing sputter etch technology by applying RF power to the wafer. Typically, the process removes residual water and other molecules and native oxides by adjusting the etching process parameters. Optionally, this module can also be equipped with an ECWR plasma source. This additional plasma source provides a more flexible etching process (higher etch rates, lower etching energies). The module geometry (large plasma source, rotational symmetric pump system) ensures a high uniformity of the etching.

Details:

  • Wafer cleaning, removal of native
    oxides by sputter etch
  • ECWR plasma source as option
  • Variable distance between substrate
    and ion source
  • Degas heater as option
  • Ultra-high vacuum technology,
    base pressure < 1*10-8 Torr

Oxidation-/Combi-Process-Module (OPM/CPM)

Oxidation of Ultra-thin Metallic Films into Insulating Films/Oxidation and Pre-clean in one Module
The Oxidation-Process-Module (OPM) is required to oxidize ultra-thin metallic films into insulating films of very high quality. Such films are required in tunnel magneto resistance layer stacks as tunneling barriers. The oxidation can be performed by using a remote plasma provided by a ECWR plasma source. This source generates oxygen ions and radicals of very low adjustable energy. Alternatively, the oxidation can be performed by the so-called natural oxidation by exposing the metal film to pure oxygen of low pressure (10 Torr down to 0.1 m Torr). The module geometry (large plasma source, rotational symmetric pump system) ensures a high uniformity of the oxidation.

The Combi-Process-Module (CPM) comprises both technologies of oxidation and pre-clean in one module. This is a cost-efficient option, since only one module for two process steps is required. It is mainly envisaged for R&D purposes, where a high throughput is of less importance. The process performance is identical with the Oxidation-Module and the Pre-Clean-Module.

Details:

  • Low energy remote plasma oxidation
  • Natural oxidation
  • Surface treatment by low energetic ions
  • Wafer cleaning, removal of native oxides
    by sputter etch
  • Variable distance between substrate
    and ion source
  • Ultra-high vacuum technology, base
    pressure < 1*10-8 Torr

Rotating-Substrate-Module (RSM)

Modular Vacuum Deposition for Applied Research in Semiconductor Industry and other Areas
The name-giving characteristic feature of the RSM is the sputter deposition onto a rotating substrate. Tilting of the substrate stage as well as the rotating speed are parameters to control the properties of the deposited films. The RSM can be equipped with up to 12 PVD cathodes with a target diameter of 100 mm. Co-sputtering with up to four cathodes utilizing DC/pulsed DC and RF mode are additional important technologies for any R&D work. The ultra-high vacuum base pressure down to < 10-8 Torr makes the RSM a perfect tool for depositing extremely thin films and stacks of such films as typical for magneto-electronic applications. The RSM is the core module of SINGULUS’ ROTARIS platform.

Applications:

  • Material evaluation due to co-sputter
  • Low initial costs on targets – COO
  • Flexible process confi guration
  • Small footprint

Details:

  • 300 mm and 200 mm wafer
  • Up to 12 PVD cathodes, target Ø 100 mm
  • Co-sputtering
  • DC/RF sputtering
  • Base pressure < 10-8 Torr
  • ICP ion source (option)
  • In-situ aligning magnetic field (option)
  • Wafer heating (option)

Static-Deposition-Module (SDM)

High Rate Sputter Deposition of Metallic and Non-conducting Materials
The Static-Deposition-Module (SDM) comprises a standard magnetron cathode with optimized target utilization for high rate sputter deposition of metallic and non-conducting materials for multiple applications. DC magnetron as well as RF magnetron sputter modes are selectable through a recipe menu. The module is envisaged to be used for deposition of films with high deposition rate that do not require the extremely high uniformity that can be achieved by the LDD technology.

Details:

  • DC and RF sputter deposition selectable
    by recipe
  • Variable distance between substrate
    and sputter target
  • Ultra-high vacuum technology, base
    pressure < 1*10-8 Torr

Small-Thermal-Processing-Module (sTPM)

R&D Version for Thermal Processing of Wafers
Module for in-situ Thermal Processing of single Wafers. This module allows to bake a substrate (wafer) within the system without breaking the vacuum and subsequent further deposition.
 
Details:

  • Thermal Processing by Annealing of wafers
  • Ultra High Vacuum back pressure
    < 1*10-8 Torr
  • Ultra High Vacuum back pressure during
    annealing < 7*10-8 Torr
  • Temperature up to 600 ºC
  • High temperature uniformity
  • High temperature stability

Ionized PVD-Module (iPVD)

Sputter Deposition Module with Ionized Sputtered Material
Sputter deposition module with high frequency plasma excitation to ionize the sputtered material. Together with substrate bias as well as by applying a magnetic field perpendicular to the wafer plane deep trenches and holes can be filled with the sputtered material.

Details:

  • 300 mm and 200 mm wafer operation
  • One sputter deposition cathode
  • DC/pulsed DC or RF sputtering
  • ICP plasma excitation
  • Toroidal coil to generate a perpendicular
    magnetic field
  • RF substrate bias
  • Base pressure < 10-8 Torr

Rapid-Thermal- and Oxidation-Process Module (rTPM/rOPM)

Modules to Provide In-situ Thermal Processing and Natural Oxidation Process with High Wafer Throughput
The rTPM provides in-situ thermal processing of wafers with temperatures up to 600 °C with high wafer throughput. By the rOPM a “natural” oxidation process is provided as well with a high wafer throughput. Both modules are basically utilizing the same “fifo” technique to allow a pseudo – simultaneous wafer processing.

Details:

  • 300 mm and 200 mm wafer operation
  • Base pressure < 10-8 Torr
  • High wafer throughput (recipe dependent)
  • rTPM

    • Wafer temperature up to 600 °C
    • Long heating time (adjustable be recipe)

  • rOPM

    • Natural oxidation: exposure of wafers
      to pure oxygen, pressure range 1*10-4
      to 10 Torr
    • Long oxidation time (adjustable be recipe)
    • Separation lock between rOPM and
      transport platform

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