Over 1,770 exhibitors participated in the world´s largest semiconductor tradeshow at the Moscone Convention Center in San Francisco from July 14 – 16, 2003. SINGULUS TECHNOLOGIES showcased its new TMR thin film sputtering technology for MRAM wafers and related applications at this exhibition.
MRAM technology gained further momentum around the world this year following the mid-June introduction at a symposium for VLSI-Technology (VLSI = Very Large Scale Integration) in Kyoto, Japan, of IBM´s and Infineon´s fast, new 128 kbit MRAM chip dated for a market launch by 2004/2005.
The global leader among optical disc equipment manufacturers, SINGULUS TECHNOLOGIES, Kahl/Main, Germany, expanded its business activities last year with the addition of a system for TMR (Tunnel Magnetic Resistance) thin film sputtering technology with MRAM (Magnetic Random Access Memory) as its principal application.
After concluding well-received customer presentations in 2002, work on the new TIMARIS TMR sputtering system for 200 and 300 mm wafers resumed this year with a primary focus on applications and sample coatings for prospective customers. Results of the test coatings to date have demonstrated that SINGULUS has engineered a technologically advanced system. The precise deposition of ultra-thin layers onto large wafers with 0.01 nm accuracy is considered to be one of the significant advantages of the TIMARIS.Following the April debut of the TIMARIS at Semicon Europe in Munich, its exhibition at the world´s largest semiconductor equipment show resonated favorably in the U.S. hub of semiconductor technology. Discussions conducted with potential customers centered around numerous ongoing projects. Increased project activity has bolstered expectations for the placement of orders before the current fiscal year is out.
Background information:
MRAM (Magnetic Random Access Memory) incorporates the advantages of a number of current storage technologies: the rapid operation of SRAM, the storage density and corresponding economic advantages of DRAM, and the data storage used in flash memory despite the absence of a constant source of power. MRAM uses magnetic elements in lieu of electronically loaded data storage bits. Data will be preserved even after the power source has been disconnected, eliminating the need to boot up. An IBM manager asserted two years ago that „MRAM has the potential to replace all existing RAM technology in future generations of computers“.