Multi-Target-Module with 10 DC/RF Cathodes
Multiple film stack deposition, without the need to break ultra-high vacuum, is one of the key advantages of the MTM process module. Additional features as wafer heating for hot substrate deposition or a collinear Aligning Magnetic Field (AMF) can be activated to align the magnetic Easy Axis during deposition of ferromagnetic films.

The Linear Dynamic Deposition (LDD) technology enables the capability to deposit wedge films with a different film thickness across the wafer and to deposit alloy films with adjustable concentration gradients across one wafer. Both features allow a very cost effective development of film stacks and accelerate the devices development.

The LDD technology is the key to delivering world class material uniformity across large wafers and exceptional precise control of ultra thin layer thickness down to 1 % of a nanometer.

Details:

• DC/RF magnetron
• All sputter deposition modes selectable by recipe for all 10 cathodes
• LDD technology
• RF bias option
• Ultra-High-Vacuum technology, base pressure < 5*10^-9 Torr
• Wafer heating and cooling

Flexible-Target-Module with 4 DC/RF Cathodes
The Flexible-Target-Module (FTM) incorporates Linear Dynamic Deposition (LDD) technology in combination with up to four sputter targets in one vacuum chamber. The FTM incorporates the same functionalities like the Multi-Target-Module (MTM) as the substrate heating, the Aligning Magnetic Field and the capability to deposit wedge films with a different film thickness across the wafer and to deposit alloy films with adjustable concentration gradients across one wafer. The only difference of the FTM is the number of targets.

Details:

• DC/RF magnetron
• All sputter deposition modes selectable by recipe for all 4 cathodes
• LDD technology
• RF bias option
• Ultra-High-Vacuum technology, base pressure < 5*10^-9 Torr
• Wafer heating and cooling

The Pre-Clean-Module (PCM) is used to clean the wafer prior to deposition. This is a standard technique employing sputter etch technology by applying RF power to the wafer. Typically the process removes residual water and other molecules and native oxides by adjusting the etching process parameters. Optionally, this module can also be equipped with an ECWR plasma source. This additional plasma source provides a more flexible etching process (higher etch rates, lower etching energies). The module geometry (large plasma source, rotational symmetric pump system) ensures a high uniformity of the etching.

Details:

• Wafer cleaning, removal of native oxides by sputter etch
• ECWR plasma source as option
• Variable distance between and ion source
• Ultra-High-Vacuum technology, base pressure < 1*10^-8 Torr

The Oxidation-Process-Module (OPM) is required to oxidize ultra-thin metallic films into insulating films of very high quality. Such films are required in Tunnel Magneto Resistance layer stacks as tunneling barriers.

The barrier material of choice is nowadays MgO, but Al₂O₃ and other materials have been considered. The oxidation can be performed by using a remote plasma provided by a ECWR plasma source. This source generates oxygen ions and radicals of very low adjustable energy. Alternatively, the oxidation can be performed by the so-called natural oxidation by exposing the metal film to pure oxygen of low pressure (10 Torr down to 0.1 m Torr). The module geometry (large plasma source, rotational symmetric pump system) ensures a high uniformity of the oxidation. Other applications for the OM are surface treatment of wafers by different activated gases (e.g. N₂).

Details:

• Low energy remote plasma oxidation
• Natural oxidation
• Surface treatment by low energetic ions
• Variable distance between substrate and ion source
• Ultra-High-Vacuum technology, base pressure < 1*10^-8 Torr

The Static-PVD-Module (sPVD-M) comprises a standard magnetron cathode with optimized target utilization for high rate sputter deposition of metallic and non-conducting materials for multiple applications. DC magnetron as well as RF magnetron sputter modes are selectable through a recipe menu. The module is envisaged to be used for deposition of films with high deposition rate that do not require the extremely high uniformity that can be achieved by the LDD technology.

Details:

• DC and RF sputter deposition selectable by recipe
• Variable distance between substrate and sputter target
• Ultra-High-Vacuum technology, base pressure < 1*10^-8 Torr

The Combi-Process-Module (CPM) comprises both technologies of oxidation and pre-clean in one module. This is a cost-efficient option, since only one module for two process steps is required. It is mainly envisaged for R&D purposes, where a high throughput is of less importance. The process performance is identical with the Oxidation-Module and the Pre-Clean-Module.
 
Details:

• Low energy remote plasma oxidation
• Natural oxidation
• Surface treatment by low energetic ions
• Wafer cleaning, removal of native oxides by sputter etch
• Variable distance between substrate and ion source
• Ultra-high vacuum technology, base pressure < 1*10-8 Torr

The ROTARIS system is a modular platform for fast, precise and fully automated vacuum thin-film deposition. ROTARIS is part of the TIMARIS platform and a bridge system for 200 mm and 300 mm wafer. ROTARIS allows up to 12 PVD cathodes with a target diameter of 100 mm. It specializes in high quality coatings in the ultra-high vacuum range up to < 10-8 Torr.

Applications:

• Material evaluation due to co-sputter
• Low initial costs on targets – COO
• Flexible process configuration
• Small footprint

 
Features:

• Rotating-Substrate-Module
• 300 mm and 200 mm wafer
• Part of the modular TIMARIS platform
• Up to 12 PVD cathodes, target Ø 100 mm
• Co-sputtering
• DC/ RF sputtering
• Process fl exibility > Ion source
• Base pressure < 10-8 Torr
• In-situ Aligning Magnetic Field (option)
• Wafer heating (option)