Inline Sputtering Systems for Different Applications

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HISTARIS Inline Sputtering Systems with Horizontal Substrate Transport

The HISTARIS system was developed for the requirements in the photovoltaic industry but also for applications in large area sputtering like architectural glazing, fuel cells and mobile devices. The HISTARIS system was designed to enhance the efficiency and cutting production costs by using the state-of-the-art technologies. The modular design includes process chambers equipped with rotatable magnetrons for the sputter deposition of high-performance TCO layers or several other materials, such as metals and metal oxides. Pre-treating modules for cleaning or etching can be added. With its unique modular design, the HISTARIS system is ideally suited for challenging layer stacks and flexible product mixes.

Examples are transparent front or metallic back contact layers as well as multilayered precursors with a broad range of different materials. The main advantage of the system is that it can be used for horizontal vacuumbased coating of glass substrates in solar, display and many other industries. Typical applications include anti-reflection layers, barrier layers and precursor layers but also different metallic layers such as Al, Cu, NiV, etc.

Typical Performance Characteristics

  • Sputtering material: ITO, AZO and metallic layers like Mo, Al, Cu, Ag, NiV etc.
  • Parallel processing of several substrates
  • Available in 3 versions:
  • HISTARIS Standard
  • HISTARIS Speed
  • Modular configuration
  • Low cost of ownership and high uptime
  • Top down and bottom-up sputtering configurable
  • Sputter sequence configurable
  • DC; pDC; BP and RF process available
  • Rotatable cylindrical magnetrons for highest utilization of target material
  • Single end and double end version selectable
  • Manual or semi-automated lab versions
  • Tact time: up to 20 s per batch (without carrier)
  • Usage of rotatable cylindrical magnetron for highest utilization of target material
  • Highest deposition rates
  • Temperature processing during deposition available
  • Gas separation by dynamic slit valves and/or by individual lock chambers
  • Vacuum base pressure: ‹ 1 x 10-6 mbar, typical process pressure: 2 - 5 x10-3 mbar

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