ROTARIS

Universal Sputtering System

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The ROTARIS ultra-high vacuum system is a modular platform for fast, precise and fully automated thin-film sputter deposition. The ROTARIS is a bridge system for 200 mm and 300 mm wafer processing. Its main deposition chamber RSM (Rotating-Substrate-Module) can house up to 12 physical vapor deposition (PVD) cathodes with a target diameter of 100 mm.

The ROTARIS design provides in particular a rotating substrate deposition technology with the additional capability to tilt the substrate. Additional features are “Co-sputtering” with up to four cathodes, DC-, pulsed DC-, RF-sputtering, wafer heating, and an in-situ aligning magnetic field. The installation of an ion source as alternative equipment allows for surface treatment and smoothing, ion milling and side wall cleaning.

Four additional different process modules are available to configure a ROTARIS system according to customer needs to cover their challenging applications. These modules include industry proven modules like the Oxidation-Process-Module (OPM), Pre-Clean-Module (PCM), Combi-Process-Module (CPM) and Static-PVD-Module (sPVD-M).

ROTARIS Basic

ROTARIS Basic sputtering system for processing up to 200 mm wafer.

Example of configuration:

  • 1x Rotating-Substrate-Module RSM
  • 1x Manual wafer load lock

ROTARIS Advanced

ROTARIS Advanced sputtering system with additional modules for processing up to 200 mm wafer.

Example of configuration:

  • 1 x Rotating-Substrate-Module RSM
  • 1 x Combi-Process-Module CMP
  • 1 x MX400 Central-Transport-Module CTM

ROTARIS Diversity

ROTARIS Diversity sputtering system with six modules for advanced processing up to 200 mm wafer.

Example of configuration:

  • 3 x Rotating-Substrate-Module RSM
  • 1 x Combi-Process-Module CMP
  • 1 x Small-Thermal-Process-Module sTPM
  • 1 x MX700 Central-Transport-Module CTM
Configuration with ion source and six cathodes. Only left or right located process equipment can be operated at the same time.     Basic configuration with 12 cathodes. Only left or right located process equipment can be operated at the same time.    DC-Sputtering    RF-Sputtering
Left Right Left Right Left: Right: Left: Right:
Four outer cathodes selected Two inner cathodes selected Two cathodes on each side are selectable for RF sputtering
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